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Proceedings Paper

In-situ wafer curvature measurements during rapid thermal annealing of Si(100) wafers
Author(s): J. Hans F. Jongste; Tom Oosterlaken; G. C.J. Bart; Guido C.A.M. Janssen; Sybrand Radelaar
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Paper Abstract

During Rapid Thermal Annealing (RTA) of silicon wafers a nonuniform temperature distribution may exist across the wafer caused by a variation of the radiation flux. Due to the thermal gradient, differences in thermal expansion introduce thermal stresses in the material. In a modified RTA system the deformation originating from the thermal stress was monitored by measurement of the wafer curvature using the reflection of a laser beam off the wafer surface. The measurements were performed in real-time by a dedicated image processing system. Silicon wafers were radiatively heated to approximately equals 850 degree(s)C for 90 seconds by halogen lamps at a constant temperature of approximately equals 1740 degree(s)C. The results show that during the complete RTA cycle wafers are in a deformed state. In particular, the deformation is largest during the heating and cooling transients. It is shown that the deformation is reduced by application of radiation shielding.

Paper Details

Date Published: 19 September 1995
PDF: 11 pages
Proc. SPIE 2637, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing, (19 September 1995); doi: 10.1117/12.221306
Show Author Affiliations
J. Hans F. Jongste, Delft Univ. of Technology (Netherlands)
Tom Oosterlaken, Delft Univ. of Technology (Netherlands)
G. C.J. Bart, Delft Univ. of Technology (Netherlands)
Guido C.A.M. Janssen, Delft Univ. of Technology (Netherlands)
Sybrand Radelaar, Delft Univ. of Technology (Netherlands)


Published in SPIE Proceedings Vol. 2637:
Process, Equipment, and Materials Control in Integrated Circuit Manufacturing
Anant G. Sabnis; Ivo J. Raaijmakers, Editor(s)

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