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Proceedings Paper

Resistor, silicon dioxide, and nitrite films ion etching process: in-situ monitoring using photoemission testing
Author(s): A. Kunitzin; Yuri Dekhtyar; Vladimir Noskov
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Paper Abstract

The photoelectron emission method and the special equipment have been developed to control processes of resistor, silicon dioxide and nitrite thin films. The main idea of the method is based on the difference of work functions of the film and a wafer. It is possible to test structural and phase properties of the films too. The above equipment has been incorporated with the industry instruments providing ion etching.

Paper Details

Date Published: 19 September 1995
PDF: 6 pages
Proc. SPIE 2637, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing, (19 September 1995); doi: 10.1117/12.221304
Show Author Affiliations
A. Kunitzin, Riga Technical Univ. (Latvia)
Yuri Dekhtyar, Riga Technical Univ. (Latvia)
Vladimir Noskov, Riga Technical Univ. (Latvia)

Published in SPIE Proceedings Vol. 2637:
Process, Equipment, and Materials Control in Integrated Circuit Manufacturing
Anant G. Sabnis; Ivo J. Raaijmakers, Editor(s)

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