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Proceedings Paper

Low-doped etch stopping for micromechanical device production
Author(s): David B. Murfett; Malcolm R. Haskard; Alan J. Marriage
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Paper Abstract

This paper describes significant advancements to a low doped etch-stop technique which increases the differential etch rate of high doped to low doped silicon (Rh/l) by a factor of 4 or greater, to a value of up to Rh/l approximately equals 50:1. The objective of the research was to achieve this increase in the differential etch rate by decreasing the etch rate of the low doped silicon epilayer, resulting in the development of an exceptional technique for rapid, safe, and high-quality etching of complex micro-structures. The technique has been confirmed by the production of devices. These include both 10 micrometers thick diaphragms and a complete accelerometer structure, created fom n on n+ epitaxial samples.

Paper Details

Date Published: 19 September 1995
PDF: 6 pages
Proc. SPIE 2639, Micromachining and Microfabrication Process Technology, (19 September 1995); doi: 10.1117/12.221292
Show Author Affiliations
David B. Murfett, Univ. of South Australia (Australia)
Malcolm R. Haskard, Univ. of South Australia (Australia)
Alan J. Marriage, Univ. of South Australia (Australia)

Published in SPIE Proceedings Vol. 2639:
Micromachining and Microfabrication Process Technology
Karen W. Markus, Editor(s)

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