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Proceedings Paper

Mechanical loss measurements of vacuum-operated, single-crystal silicon microresonators
Author(s): Robert E. Mihailovich; Noel C. MacDonald
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Paper Abstract

The quality factor of vacuum-operated single-crystal silicon microresonators was measured to identify their important sources of mechanical loss when medium-related loss is absent. The microresonators were torsional structures consisting of beams of width approximately 0.7 micrometers , and fabricated by reactive-ion-etching from the single-crystal silicon substrate. For torsional microresonators having Q's approximately 50,000, doping-impurity and support- related losses do not seem to be significant. Rather, the reactive-ion-etched surfaces of the microstructures appear to be the dominant source of mechanical loss. This etched-surface loss can be halved by thermal oxidation, resulting in microresonators with Q's consistently 80,000- 100,000. A model for this surface-related loss is presented.

Paper Details

Date Published: 19 September 1995
PDF: 13 pages
Proc. SPIE 2639, Micromachining and Microfabrication Process Technology, (19 September 1995); doi: 10.1117/12.221291
Show Author Affiliations
Robert E. Mihailovich, Cornell Univ. (United States)
Noel C. MacDonald, Cornell Univ. (United States)


Published in SPIE Proceedings Vol. 2639:
Micromachining and Microfabrication Process Technology
Karen W. Markus, Editor(s)

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