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Proceedings Paper

Novel low-stress SiO2-xFx film deposited by room-temperture liquid-phase deposition method
Author(s): Ching-Fa Yeh; Shyue-Shyh Lin
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Paper Abstract

To develop a low-stress thin film for micromachined devices, a novel liquid-phase deposition (LPD) SiO2 - xFx technique utilizing silica-saturated H2SiF6 solution with H2O addition only is proposed. Due to extremely low-temperature processing and fluorine incorporation, the stress of the LPD SiO2 - xFx film can be less than 100 MPa. In this paper, we found that the deposition parameter of H2O addition has much efect on the stress of as-deposited LPD oxide. The stress variations with thermal cycling has also been clarified. We found that the LPD SiO2 - xFx film will be a good candidate as low-stress film for micromachined devices.

Paper Details

Date Published: 19 September 1995
PDF: 10 pages
Proc. SPIE 2639, Micromachining and Microfabrication Process Technology, (19 September 1995); doi: 10.1117/12.221287
Show Author Affiliations
Ching-Fa Yeh, National Chiao Tung Univ. (Taiwan)
Shyue-Shyh Lin, National Chiao Tung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 2639:
Micromachining and Microfabrication Process Technology
Karen W. Markus, Editor(s)

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