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Proceedings Paper

Influence of p-doping on the gain and refractive index dynamics in quantum dash based semiconductor optical amplifiers
Author(s): Katarzyna Komolibus; Tomasz Piwonski; Siddharth Joshi; Nicolas Chimot; John Houlihan; Francois Lelarge; Guillaume Huyet
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Paper Abstract

This work presents an investigation of room temperature ultra-fast carrier dynamics in a p-doped dash-in-a-well structure emitting at 1.5 μm using single colour heterodyne pump-probe spectroscopy. This technique enabled simultaneous access to the gain and refractive index dynamics in various operational conditions including both the absorption and gain regime. Comprehensive analysis of the timescales related to carrier relaxation and escape processes in addition to the ’dynamical’ linewidth enhancement factor are presented and compared with results obtained from similar un-doped materials. The direct influence of the p-doping on the carrier dynamics is also discussed.

Paper Details

Date Published: 4 March 2016
PDF: 8 pages
Proc. SPIE 9742, Physics and Simulation of Optoelectronic Devices XXIV, 974219 (4 March 2016); doi: 10.1117/12.2212867
Show Author Affiliations
Katarzyna Komolibus, Cork Institute of Technology (Ireland)
Tyndall National Institute (Ireland)
Tomasz Piwonski, Cork Institute of Technology (Ireland)
Tyndall National Institute (Ireland)
Siddharth Joshi, Alcatel Lucent Bell Labs. (France)
Nicolas Chimot, Alcatel Lucent Bell Labs. (France)
John Houlihan, Waterford Institute of Technology (Ireland)
Francois Lelarge, Alcatel Lucent Bell Labs. (France)
Guillaume Huyet, Cork Institute of Technology (Ireland)
Tyndall National Institute (Ireland)
ITMO Univ. (Russian Federation)


Published in SPIE Proceedings Vol. 9742:
Physics and Simulation of Optoelectronic Devices XXIV
Bernd Witzigmann; Marek Osiński; Yasuhiko Arakawa, Editor(s)

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