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Characterization and modeling of radiation damages via internal radiative efficiency in multi-junction solar cells
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Paper Abstract

In order to understand the radiation effects in space-used multi-junction solar cells, we characterized degradations of internal radiative efficiency (ηint i ) in respective subcells in InGaP/GaAs double-junction solar cells after 1-MeV electron irradiations with different electrons fluences (Φ) via absolute electroluminescence (EL) measurements, because ηint i purely represents material-quality change due to radiation damage, independently from cell structures. We analyzed the degradation of ηint i under different Φ and found that the data of ηint i versus Φ in moderate and high Φ regions are very similar and almost independent of subcell materials, while the difference in beginning-of-life qualities of InGaP and GaAs materials causes dominant difference in sub-cell sensitivity to the low radiation damages. Finally, a simple model was proposed to explain the mechanism in degradation of ηint i, and also well explained the degradation behavior in open-circuit voltage for these multi-junction solar cells.

Paper Details

Date Published: 14 March 2016
PDF: 7 pages
Proc. SPIE 9743, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices V, 97430U (14 March 2016); doi: 10.1117/12.2212827
Show Author Affiliations
Lin Zhu, The Univ. of Tokyo (Japan)
Masahiro Yoshita, The Univ. of Tokyo (Japan)
Tetsuya Nakamura, Japan Aerospace Exploration Agency (Japan)
Mitsuru Imaizumi, Japan Aerospace Exploration Agency (Japan)
Changsu Kim, The Univ. of Tokyo (Japan)
Toshimitsu Mochizuki, AIST (Japan)
Shaoqiang Chen, East China Normal Univ. (China)
Yoshihiko Kanemitsu, Kyoto Univ. (Japan)
Hidefumi Akiyama, The Univ. of Tokyo (Japan)

Published in SPIE Proceedings Vol. 9743:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices V
Alexandre Freundlich; Laurent Lombez; Masakazu Sugiyama, Editor(s)

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