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Proceedings Paper

Micromachining and focused ion beam etching of Si for accelerometers
Author(s): David F. Moore; S. C. Burgess; H.-S. Chiang; H. Klaubert; N. Shibaike; T. Kiriyama
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Paper Abstract

Silicon microfabricated devices are being developed for reliable low cost sensors including accelerometers with tunnel junction readout. Using bonded silicon on insulator wafers as the starting material, novel structures are made by conventional surface micromachining followed by focused ion beam etching through 7 micrometers thick Si cantilevers at oblique angles to form submicron gaps to be closed by electrostatic actuation.

Paper Details

Date Published: 19 September 1995
PDF: 6 pages
Proc. SPIE 2639, Micromachining and Microfabrication Process Technology, (19 September 1995); doi: 10.1117/12.221282
Show Author Affiliations
David F. Moore, Univ. of Cambridge (United Kingdom)
S. C. Burgess, Univ. of Cambridge (United Kingdom)
H.-S. Chiang, Univ. of Cambridge (United Kingdom)
H. Klaubert, Univ. of Cambridge (United Kingdom)
N. Shibaike, Matsushita Research Institute (Japan)
T. Kiriyama, Univ. of Tokyo (Japan)


Published in SPIE Proceedings Vol. 2639:
Micromachining and Microfabrication Process Technology
Karen W. Markus, Editor(s)

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