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Proceedings Paper

Advanced silicon etching using high-density plasmas
Author(s): Jy K. Bhardwaj; Huma Ashraf
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Paper Abstract

High density plasmas are beginning to dominate the market for advanced anisotropic silicon etching for MEMS applications. This paper looks at the reasons behind this dominance for high etch rate, deep anisotropic etching. A discussion of anisotropic etch mechanisms highlights the need for sidewall passivation to meet these requirements. Results are presented of a novel room temperature advanced silicon etch process: >= 2 micrometers /min; >= 70:1 selectivity to resist (and >= 150:1 to oxide); up to 30:1 aspect ratio; 500 micrometers depth capability; using a non-toxic, non-corrosive environmentally acceptable fluorine-based chemistry.

Paper Details

Date Published: 19 September 1995
PDF: 10 pages
Proc. SPIE 2639, Micromachining and Microfabrication Process Technology, (19 September 1995); doi: 10.1117/12.221279
Show Author Affiliations
Jy K. Bhardwaj, Surface Technology Systems, Ltd. (United Kingdom)
Huma Ashraf, Surface Technology Systems, Ltd. (United Kingdom)


Published in SPIE Proceedings Vol. 2639:
Micromachining and Microfabrication Process Technology
Karen W. Markus, Editor(s)

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