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Proceedings Paper

High-power single emitters and low fill factor bars emitting at 808 nm
Author(s): A. Pietrzak; R. Hülsewede; M. Zorn; J. Meusel; J. Sebastian
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Paper Abstract

Single emitters emitting at a wavelength around 808 nm are highly-desired as pump sources of low power solid state lasers. The latest development of high-power single emitters having emitter apertures of 95 μm, 100 μm and 200 μm based on TM-polarized material are presented. The devices were characterized up to their maximum optical output powers of 15 W from 100 μm wide emitters and 22 W from 200 μm wide emitters. The operation point of these devices is set to 7 W and 10 W, respectively with wall-plug efficiencies of ~55%. Furthermore first results on 5- emitters bars operating at 40 W are presented.

Paper Details

Date Published: 4 March 2016
PDF: 10 pages
Proc. SPIE 9733, High-Power Diode Laser Technology and Applications XIV, 97330R (4 March 2016); doi: 10.1117/12.2212709
Show Author Affiliations
A. Pietrzak, JENOPTIK Diode Lab GmbH (Germany)
R. Hülsewede, JENOPTIK Diode Lab GmbH (Germany)
M. Zorn, JENOPTIK Diode Lab GmbH (Germany)
J. Meusel, JENOPTIK Laser GmbH (Germany)
J. Sebastian, JENOPTIK Diode Lab GmbH (Germany)

Published in SPIE Proceedings Vol. 9733:
High-Power Diode Laser Technology and Applications XIV
Mark S. Zediker, Editor(s)

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