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Proceedings Paper

Development for ultraviolet vertical cavity surface emitting lasers
Author(s): Yuh-Shiuan Liu; Tsung-Ting Kao; Karan Mehta; Shyh-Chiang Shen; P. Douglas Yoder; Theeradetch Detchprohm; Russell D. Dupuis; Hongen Xie; Fernando A. Ponce
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Paper Abstract

We report our current development progress of ultraviolet vertical-cavity surface-emitting lasers, which included the development of an electrically conducting n-DBR consisting of 40-pairs of Si-doped quarter-wavelength layers of Al0.12Ga0.88N and GaN. A peak reflectivity of 91.6% at 368 nm was measured and a series resistance of 17.7Ω was extracted near the maximum measured current of 100 mA. Furthermore, a micro-cavity light emitting diode was demonstrated by utilizing the established n-DBR. A 2λ cavity was subsequently grown on the 40-pair Al0.12Ga0.88N/GaN n-DBR and a peak wavelength of 371.4 nm was observed with spectral linewidth of 5.8 nm.

Paper Details

Date Published: 26 February 2016
PDF: 7 pages
Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 974815 (26 February 2016); doi: 10.1117/12.2212617
Show Author Affiliations
Yuh-Shiuan Liu, Georgia Institute of Technology (United States)
Tsung-Ting Kao, Georgia Institute of Technology (United States)
Karan Mehta, Georgia Institute of Technology (United States)
Shyh-Chiang Shen, Georgia Institute of Technology (United States)
P. Douglas Yoder, Georgia Institute of Technology (United States)
Theeradetch Detchprohm, Georgia Institute of Technology (United States)
Russell D. Dupuis, Georgia Institute of Technology (United States)
Hongen Xie, Arizona State Univ. (United States)
Fernando A. Ponce, Arizona State Univ. (United States)


Published in SPIE Proceedings Vol. 9748:
Gallium Nitride Materials and Devices XI
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç; Yasushi Nanishi; Ulrich T. Schwarz; Jong-In Shim, Editor(s)

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