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Proceedings Paper

Hot-carrier solar cell NEGF-based simulations
Author(s): Nicolas Cavassilas; Fabienne Michelini; Marc Bescond; Thibault Joie
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Paper Abstract

Ultra thin absorbers for the hot carrier solar cell applications are promising. Indeed, in these ultimate absorbers electronphonon scattering are reduced and thickness can be lower than the electron mean-free-path. In this case carriers reach contact ballistically. However it is important that the contact permits to extract these carriers. This theoretical study is about the extraction of the photogenerated carriers and particularly the ballistic extraction without any scattering. We show that quantum interaction between the ultra-thin absorber and the contact can be used to enhance the extraction. Particularly, a contact composed of a quantum well into a double barrier permits to increase the current compared to a simple contact. This improvement is due to a quantum resonance. This result is interesting for the hot carrier solar cells but also for all the ultra-thin cells.

Paper Details

Date Published: 14 March 2016
PDF: 6 pages
Proc. SPIE 9743, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices V, 97430R (14 March 2016); doi: 10.1117/12.2212612
Show Author Affiliations
Nicolas Cavassilas, Institut Matériaux Microélectronique Nanosciences de Provence (France)
Fabienne Michelini, Institut Matériaux Microélectronique Nanosciences de Provence (France)
Marc Bescond, Institut Matériaux Microélectronique Nanosciences de Provence (France)
Thibault Joie, Institut Matériaux Microélectronique Nanosciences de Provence (France)


Published in SPIE Proceedings Vol. 9743:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices V
Alexandre Freundlich; Laurent Lombez; Masakazu Sugiyama, Editor(s)

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