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Proceedings Paper

Quasi-Fermi level splitting evaluation based on electroluminescence analysis in multiple quantum-well solar cells for investigating cell performance under concentrated light
Author(s): Tomoyuki Inoue; Kasidit Toprasertpong; Amaury Delamarre; Kentaroh Watanabe; Myriam Paire; Laurent Lombez; Jean-François Guillemoles; Masakazu Sugiyama; Yoshiaki Nakano
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Paper Abstract

Insertion of InGaAs/GaAsP strain-balanced multiple quantum wells (MQWs) into i-regions of GaAs p-i-n solar cells show several advantages against GaAs bulk p-i-n solar cells. Particularly under high-concentration sunlight condition, enhancement of the open-circuit voltage with increasing concentration ratio in thin-barrier MQW cells has been reported to be more apparent than that in GaAs bulk cells. However, investigation of the MQW cell mechanisms in terms of I-V characteristics under high-concentration sunlight suffers from the increase in cell temperature and series resistance. In order to investigate the mechanism of the steep enhancement of open-circuit voltage in MQW cells under high-concentration sunlight without affected by temperature, the quasi-Fermi level splitting was evaluated by analyzing electroluminescence (EL) from a cell. Since a cell under current injection with a density Jinjhas similar excess carrier density to a cell under concentrated sunlight with an equivalent short-circuit current Jsc = Jinj, EL measurement with varied Jinj can approximately evaluate a cell performance under a variety of concentration ratio. In addition to the evaluation of quasi-Fermi level splitting, the external luminescence efficiency was also investigated with the EL measurement. The MQW cells showed higher external luminescence efficiency than the GaAs reference cells especially under high-concentration condition. The results suggest that since the MQW region can trap and confine carriers, the localized excess carriers inside the cells make radiative recombination more dominant.

Paper Details

Date Published: 14 March 2016
PDF: 8 pages
Proc. SPIE 9743, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices V, 974316 (14 March 2016); doi: 10.1117/12.2212572
Show Author Affiliations
Tomoyuki Inoue, The Univ. of Tokyo (Japan)
Kasidit Toprasertpong, The Univ. of Tokyo (Japan)
Amaury Delamarre, The Univ. of Tokyo (Japan)
Kentaroh Watanabe, The Univ. of Tokyo (Japan)
Myriam Paire, Institut de Recherche et Développement sur l'Energie Photovoltaïque (France)
Laurent Lombez, The Univ. of Tokyo (Japan)
Jean-François Guillemoles, The Univ. of Tokyo (Japan)
Institut de Recherche et Développement sur l'Energie Photovoltaïque (France)
Masakazu Sugiyama, The Univ. of Tokyo (Japan)
Yoshiaki Nakano, The Univ. of Tokyo (Japan)


Published in SPIE Proceedings Vol. 9743:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices V
Alexandre Freundlich; Laurent Lombez; Masakazu Sugiyama, Editor(s)

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