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Proceedings Paper

High throughput P2 laser scribing of Cu(In,Ga)Se2 thin-film solar cells
Author(s): Andreas Burn; Christian Heger; Stephan Buecheler; Shiro Nishiwaki; David Bremaud; Roger Ziltener; Lukas Krainer; Gabriel Spuehler; Valerio Romano
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Paper Abstract

Laser scribing is an indispensable step in the industrial production of Cu(In,Ga)Se2 thin film solar modules. While cell separation (P1 and P3) is usually achieved using high velocity, low overlap lift-off processes, removal of the absorber layer for generating an electrical back-to-front interconnect (P2) is typically a slow process. In the present study we present an approach for scaling the classical P2 process velocity to an industrially exploitable level. We demonstrated successful P2 scribing at up to 1.7 m/s in a single beam, single pass configuration using a linear focal spot. The presented process is robust against variations in the scribing velocity and focal position, a key point for successful machine integration.

Paper Details

Date Published: 14 March 2016
PDF: 13 pages
Proc. SPIE 9735, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXI, 973504 (14 March 2016); doi: 10.1117/12.2212496
Show Author Affiliations
Andreas Burn, Berner Fachhochschule Technik und Informatik (Switzerland)
Christian Heger, Berner Fachhochschule Technik und Informatik (Switzerland)
Stephan Buecheler, EMPA (Switzerland)
Shiro Nishiwaki, EMPA (Switzerland)
David Bremaud, Flisom AG (Switzerland)
Roger Ziltener, Flisom AG (Switzerland)
Lukas Krainer, Onefive GmbH (Switzerland)
Gabriel Spuehler, Onefive GmbH (Switzerland)
Valerio Romano, Berner Fachhochschule Technik und Informatik (Switzerland)

Published in SPIE Proceedings Vol. 9735:
Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXI
Beat Neuenschwander; Stephan Roth; Costas P. Grigoropoulos; Tetsuya Makimura, Editor(s)

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