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Proceedings Paper

1.2μm emitting VECSEL based on type-II aligned QWs
Author(s): C. Möller; C. Berger; C. Fuchs; A. Ruiz Perez; S. W. Koch; J. Hader; J. V. Moloney; W. Stolz
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Paper Abstract

Since the invention of VECSELs, their great spectral coverage has been demonstrated and emission wavelengths in the range from UV to almost MIR have been achieved. However, in the infrared regime the laser performance is affected by Auger losses which become significant at large quantum defects. In order to reduce the Auger losses and to develop more efficient devices in the IR, type-II aligned QWs have been suggested as alternative gain medium for semiconductor lasers.

Paper Details

Date Published: 10 March 2016
PDF: 5 pages
Proc. SPIE 9734, Vertical External Cavity Surface Emitting Lasers (VECSELs) VI, 97340H (10 March 2016); doi: 10.1117/12.2212438
Show Author Affiliations
C. Möller, Philipps-Univ. Marburg (Germany)
C. Berger, Philipps-Univ. Marburg (Germany)
C. Fuchs, Philipps-Univ. Marburg (Germany)
A. Ruiz Perez, NAsP III/V GmbH (Germany)
S. W. Koch, Philipps-Univ. Marburg (Germany)
J. Hader, Nonlinear Control Strategies, Inc. (United States)
J. V. Moloney, Nonlinear Control Strategies, Inc. (United States)
W. Stolz, Philipps-Univ. Marburg (Germany)
NAsP III/V GmbH (Germany)

Published in SPIE Proceedings Vol. 9734:
Vertical External Cavity Surface Emitting Lasers (VECSELs) VI
Keith G. Wilcox, Editor(s)

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