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Proceedings Paper

An efficient total-internal-reflection optical switch based on reverse breakdown of pn junction and thermo-optic effect in silicon
Author(s): Jong-Hun Kim; Seong-Hwan Kim; Muhyun Jin; Sanggu Yeo; Dong-Eun Yoo; Dong-Wook Lee; Hyo-Hoon Park
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Paper Abstract

We propose and experimentally demonstrate a new type of silicon total-internal-reflection (TIR) optical switch by embedding of pn junction providing both function of a reflector and a thermo-optic heater simultaneously. The TIR switch is composed of asymmetrically y-branched multimode waveguides with a waveguide width of 5 μm for a switching node. The incident light is tapered from singlemode waveguides for the fundamental mode propagation and normally reflected without bias at the pn diode based on free carrier plasma dispersion effect. The switching operation is achieved by thermo-optic effect which can compensate the decreased refractive index at the doped region based on reverse breakdown of pn junction. At the rest of switch, extinction ratio of 8 dB and insertion loss of 5.6 dB are achieved with a 3° and 1-μm-thick reflector, By applying -50 V to pn diode, we achieved the perfect switching operation with an extinction ratio of 11.6 dB, an insertion loss of -4.1 dB and a thermal heating power of 152.5 mW.

Paper Details

Date Published: 15 March 2016
PDF: 8 pages
Proc. SPIE 9753, Optical Interconnects XVI, 97530B (15 March 2016); doi: 10.1117/12.2212377
Show Author Affiliations
Jong-Hun Kim, KAIST (Korea, Republic of)
Seong-Hwan Kim, KAIST (Korea, Republic of)
Muhyun Jin, KAIST (Korea, Republic of)
Sanggu Yeo, KAIST (Korea, Republic of)
Dong-Eun Yoo, National Nanofab Ctr. (Korea, Republic of)
Dong-Wook Lee, National Nanofab Ctr. (Korea, Republic of)
Hyo-Hoon Park, KAIST (Korea, Republic of)


Published in SPIE Proceedings Vol. 9753:
Optical Interconnects XVI
Henning Schröder; Ray T. Chen, Editor(s)

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