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Proceedings Paper

Optimization of the epitaxial design of high current density resonant tunneling diodes for terahertz emitters
Author(s): Razvan Baba; Benjamin J. Stevens; Toshikazu Mukai; Richard A. Hogg
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Paper Abstract

We discuss the numerical simulation of high current density InGaAs/AlAs/InP resonant tunneling diodes with a view to their optimization for application as THz emitters. We introduce a figure of merit based upon the ratio of maximum extractable THz power and the electrical power developed in the chip. The aim being to develop high efficiency emitters as output power is presently limited by catastrophic failure. A description of the interplay of key parameters follows, with constraints on strained layer epitaxy introduced. We propose an optimized structure utilizing thin barriers paired with a comparatively wide quantum well that satisfies strained layer epitaxy constraints.

Paper Details

Date Published: 13 February 2016
PDF: 10 pages
Proc. SPIE 9755, Quantum Sensing and Nano Electronics and Photonics XIII, 97552W (13 February 2016); doi: 10.1117/12.2212346
Show Author Affiliations
Razvan Baba, Univ. of Glasgow (United Kingdom)
Benjamin J. Stevens, The Univ. of Sheffield (United Kingdom)
Toshikazu Mukai, Rohm Co., Ltd. (Japan)
Richard A. Hogg, Univ. of Glasgow (United Kingdom)

Published in SPIE Proceedings Vol. 9755:
Quantum Sensing and Nano Electronics and Photonics XIII
Manijeh Razeghi, Editor(s)

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