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Proceedings Paper

Bandgap engineering of InGaAsP/InP laser structure by photo-absorption-induced point defects
Author(s): Mohammad Kaleem; Sajid Nazir; Nazar Abbas Saqib
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Paper Abstract

Integration of photonic components on the same photonic wafer permits future optical communication systems to be dense and advanced performance. This enables very fast information handling between photonic active components interconnected through passive optical low loss channels. We demonstrate the UV-Laser based Quantum Well Intermixing (QWI) procedure to engineer the band-gap of compressively strained InGaAsP/InP Quantum Well (QW) laser material. We achieved around 135nm of blue-shift by simply applying excimer laser (λ= 248nm). The under observation laser processed material also exhibits higher photoluminescence (PL) intensity. Encouraging experimental results indicate that this simple technique has the potential to produce photonic integrated devices and circuits.

Paper Details

Date Published: 3 March 2016
PDF: 7 pages
Proc. SPIE 9751, Smart Photonic and Optoelectronic Integrated Circuits XVIII, 97510E (3 March 2016); doi: 10.1117/12.2212311
Show Author Affiliations
Mohammad Kaleem, COMSATS Institute of Information Technology (Pakistan)
Sajid Nazir, London South Bank Univ. (United Kingdom)
Nazar Abbas Saqib, National Univ. of Sciences and Technology (Pakistan)

Published in SPIE Proceedings Vol. 9751:
Smart Photonic and Optoelectronic Integrated Circuits XVIII
Sailing He; El-Hang Lee; Louay A. Eldada, Editor(s)

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