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Proceedings Paper

Free-carrier contribution to all-optical switching in Mie-resonant hydrogenated amorphous silicon nanodisks
Author(s): Polina P. Vabishchevich; Alexander S. Shorokhov; Maxim R. Shcherbakov; Andrey A. Fedyanin
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Paper Abstract

Conventionally, all-optical switching devices made out from bulk silicon and other semiconductors are limited by free-carrier relaxation time which spans from picoseconds to microseconds. In this work, we discuss the possibility to suppress the undesired long free-carrier relaxation in subwavelength dielectric nanostructures exhibiting localized magnetic Mie resonances. Numerical calculations show the unsymmetrical modification of the transmittance spectra of the nanodisks due the free carriers photo-injection. Such a spectral dependance allows to control temporal response of the nanostructure by varying the laser pulse spectum.

Paper Details

Date Published: 14 March 2016
PDF: 7 pages
Proc. SPIE 9756, Photonic and Phononic Properties of Engineered Nanostructures VI, 97560E (14 March 2016); doi: 10.1117/12.2212294
Show Author Affiliations
Polina P. Vabishchevich, Lomonosov Moscow State Univ. (Russian Federation)
Alexander S. Shorokhov, Lomonosov Moscow State Univ. (Russian Federation)
Maxim R. Shcherbakov, Lomonosov Moscow State Univ. (Russian Federation)
Andrey A. Fedyanin, Lomonosov Moscow State Univ. (Russian Federation)


Published in SPIE Proceedings Vol. 9756:
Photonic and Phononic Properties of Engineered Nanostructures VI
Ali Adibi; Shawn-Yu Lin; Axel Scherer, Editor(s)

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