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Proceedings Paper

Determination of internal quantum efficiency in GaN by simultaneous measurements of photoluminescence and photo-acoustic signals
Author(s): T. Nakano; K. Kawakami; A. A. Yamaguchi
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Paper Abstract

Internal quantum efficiency (IQE) is usually estimated from temperature dependence of photoluminescence (PL) intensity by assuming that the IQE at cryogenic temperature is unity. III-nitride samples, however, usually have large defect-density, and the assumption is not necessarily valid. In this study, we developed a new method to estimate accurate IQE values by simultaneous PL and photo-acoustic (PA) measurements, and demonstratively evaluated the IQE values for various GaN samples. The results show that the conventional method cannot give accurate IQE values for low-quality samples although it can be valid for high-quality samples, and that our method can always give accurate values.

Paper Details

Date Published: 26 February 2016
PDF: 7 pages
Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 97481W (26 February 2016); doi: 10.1117/12.2212243
Show Author Affiliations
T. Nakano, Kanazawa Institute of Technology (Japan)
K. Kawakami, Kanazawa Institute of Technology (Japan)
A. A. Yamaguchi, Kanazawa Institute of Technology (Japan)


Published in SPIE Proceedings Vol. 9748:
Gallium Nitride Materials and Devices XI
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç; Yasushi Nanishi; Ulrich T. Schwarz; Jong-In Shim, Editor(s)

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