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Proceedings Paper

Advances in infrared spectroscopic methods for epitaxial film characterization
Author(s): Ronald A. Carpio; Burt W. Fowler; Wolfgang Theiss
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Paper Abstract

Recent developments in the measurement of epitaxial silicon thin films enable the doping transition width and the substrate carrier concentration to be measured in addition to the film thickness. A model has been developed to simulate the reflectance spectra of lightly-doped epitaxial silicon films deposited on doped silicon substrates in both the mid- and far-infrared spectral regions. Using a model-based approach eliminates the need for instrument calibration and the addition of a bias to the measurement results. Epitaxial films ranging in thickness from 0.1 to 5.0 micrometers were analyzed. Results using a double-side polished silicon wafer as the reference were similar to those using an absolute gold reference. Thickness and doping transition width measurements are consistent with results obtained using other techniques.

Paper Details

Date Published: 18 September 1995
PDF: 12 pages
Proc. SPIE 2638, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing II, (18 September 1995); doi: 10.1117/12.221212
Show Author Affiliations
Ronald A. Carpio, SEMATECH (United States)
Burt W. Fowler, SEMATECH (United States)
Wolfgang Theiss, Aachen Univ. of Technology (Germany)

Published in SPIE Proceedings Vol. 2638:
Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing II
John K. Lowell; Ray T. Chen; Jagdish P. Mathur, Editor(s)

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