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Proceedings Paper

Rate controlled metal assisted chemical etching to fabricate vertical and uniform Si nanowires
Author(s): Ari Song; Seokhun Yun; Vaibhav Lokhande; Taeksoo Ji
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Paper Abstract

Mac(metal assisted chemical) etching is a simple, low-cost and anisotropic etching method to make Si NWs (silicon nanowires). In this method, smaller surface area is damaged compared to dry etching process, either. Mac etching uses a combination of an oxide removal acid (e.g. HF), an oxidant (e.g. H2O2) with a noble metal (e.g. Au, Ag, Pt, etc.) as the catalyst. Typically, the Si beneath the noble metal is etched faster than the Si without noble metal coverage by electron transfer mechanism at the noble metal /solution and the noble metal/Si interface. While Mac etching to build Si NWs, unwanted etching occurs in the bulk silicon layer resulting from excess hole diffusion caused by the increase in hole concentration at the nearby metal layers. In this study, we explored the ratio of oxidant to oxide removal acid in the Mac etching solution that is most effective in etching the Si underneath the noble metal layer suppressing the unwanted etching. At the optimized ratio, Si NWs were fabricated at a faster rate with good uniformity.

Paper Details

Date Published: 14 March 2016
PDF: 5 pages
Proc. SPIE 9759, Advanced Fabrication Technologies for Micro/Nano Optics and Photonics IX, 97591H (14 March 2016); doi: 10.1117/12.2212105
Show Author Affiliations
Ari Song, Chonnam National Univ. (Korea, Republic of)
Seokhun Yun, Chonnam National Univ. (Korea, Republic of)
Vaibhav Lokhande, Chonnam National Univ. (Korea, Republic of)
Taeksoo Ji, Chonnam National Univ. (Korea, Republic of)

Published in SPIE Proceedings Vol. 9759:
Advanced Fabrication Technologies for Micro/Nano Optics and Photonics IX
Georg von Freymann; Winston V. Schoenfeld; Raymond C. Rumpf, Editor(s)

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