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Proceedings Paper

Optical studies of fluorocarbon film formation by a high-density plasma etcher
Author(s): Ronald A. Carpio; Burt W. Fowler; Thien T. Nguyen
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Paper Abstract

Fourier-transform infrared spectroscopy and spectroscopic ellipsometry are used to determine the composition and thickness of the fluorocarbon polymer formed during etching of silicon dioxide films on silicon substrates using C2F6 in a high- density plasma. The fluorocarbon polymer is characterized as the key process parameters are systematically varied.

Paper Details

Date Published: 18 September 1995
PDF: 12 pages
Proc. SPIE 2638, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing II, (18 September 1995); doi: 10.1117/12.221208
Show Author Affiliations
Ronald A. Carpio, SEMATECH (United States)
Burt W. Fowler, SEMATECH (United States)
Thien T. Nguyen, Advanced Micro Devices, Inc. (United States)


Published in SPIE Proceedings Vol. 2638:
Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing II
John K. Lowell; Ray T. Chen; Jagdish P. Mathur, Editor(s)

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