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Proceedings Paper

In-situ wafer contamination detection through rf-PCD Measurements
Author(s): Jurgen Michel; Marcia R. Black; G. J. Norga; Kathryn A. Black; Hichem M'saad; Lionel C. Kimerling
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Paper Abstract

Radio-frequency photoconductance decay (RF-PCD) is a contactless method of measuring minority carrier lifetime in silicon. Low detection limits and speed of measurement makes this method ideally suited for in-situ determination of silicon wafer passivation and contamination processes. Comparative measurements of copper contamination of silicon surfaces using RF- PCD and TXRF yield a detection limit of about 109 Cu/cm2. The fast detection of changes in surface defects enables the time resolved observation of surface passivation breakdown due to the exposure of the wafer to controlled atmospheres. While nitrogen does not attack the surface passivation, oxygen exposure results in immediate native oxide growth.

Paper Details

Date Published: 18 September 1995
PDF: 7 pages
Proc. SPIE 2638, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing II, (18 September 1995); doi: 10.1117/12.221203
Show Author Affiliations
Jurgen Michel, Massachusetts Institute of Technology (United States)
Marcia R. Black, Massachusetts Institute of Technology (United States)
G. J. Norga, Massachusetts Institute of Technology (United States)
Kathryn A. Black, Massachusetts Institute of Technology (United States)
Hichem M'saad, Massachusetts Institute of Technology (United States)
Lionel C. Kimerling, Massachusetts Institute of Technology (United States)


Published in SPIE Proceedings Vol. 2638:
Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing II
John K. Lowell; Ray T. Chen; Jagdish P. Mathur, Editor(s)

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