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Proceedings Paper

Optical characterization of surface damage of silicon wafers caused by plasma cleaning
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Paper Abstract

During processing of microelectronic devices, the silicon substrate is typically subjected to a cleaning process in order to prepare its surface for deposition of various layers of thin films. Usually the cleaning process creates a damaged surface layer, which in turn can affect the characteriscs of a deposited film. In particular, plasma cleaning characterization technique that can simultaneously and unambiguously determine the thickness and n and k spectra of the damaged surface layer is described. The technique can be used for sustaining engineering, quality control, and research and development as a means to optimize the surface characteristics of silicon wafers subjected to plasma cleaning.

Paper Details

Date Published: 18 September 1995
PDF: 7 pages
Proc. SPIE 2638, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing II, (18 September 1995); doi: 10.1117/12.221197
Show Author Affiliations
A. Rahim Forouhi, n&k Technology, Inc. (United States)
Iris Bloomer, n&k Technology, Inc. (United States)


Published in SPIE Proceedings Vol. 2638:
Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing II
John K. Lowell; Ray T. Chen; Jagdish P. Mathur, Editor(s)

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