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Proceedings Paper

Interface control technologies for high-power GaN transistors: Self-stopping etching of p-GaN layers utilizing electrochemical reactions
Author(s): Taketomo Sato; Yusuke Kumazaki; Masaaki Edamoto; Masamichi Akazawa; Tamotsu Hashizume
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Paper Abstract

The selective and low-damaged etching of p-type GaN or AlGaN layer is inevitable process for AlGaN/GaN high-power transistors. We have investigated an electrochemical etching of p-GaN layer grown on AlGaN/GaN heterostructures, consisting of an anodic oxidation of p-GaN surface and a subsequent dissolution of the resulting oxide. The p-GaN layer was electrochemically etched by following the pattern of the SiO2 film that acted as an etching mask. Etching depth was linearly controlled by cycle number of triangular waveform at a rate of 25 nm/cycle. The AFM, TEM and μ-AES results showed that the top p-GaN layer was completely removed after 5 cycles applied, and the etching reaction was automatically sopped on the AlGaN surface. I-V and C-V measurements revealed that no significant damages were induced in the AlGaN/GaN heterostructures.

Paper Details

Date Published: 26 February 2016
PDF: 7 pages
Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 97480Y (26 February 2016); doi: 10.1117/12.2211964
Show Author Affiliations
Taketomo Sato, Hokkaido Univ. (Japan)
Yusuke Kumazaki, Hokkaido Univ. (Japan)
Masaaki Edamoto, Hokkaido Univ. (Japan)
Masamichi Akazawa, Hokkaido Univ. (Japan)
Tamotsu Hashizume, Hokkaido Univ. (Japan)
Japan Science and Technology Agency (Japan)


Published in SPIE Proceedings Vol. 9748:
Gallium Nitride Materials and Devices XI
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç; Yasushi Nanishi; Ulrich T. Schwarz; Jong-In Shim, Editor(s)

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