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Proceedings Paper

Oxide charging induced by electron exposure in ion implant
Author(s): Alan Stuber; John K. Lowell
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Paper Abstract

The use of electron showers (flood guns) during ion implantation has been used industry-wide to compensate the parasitic effects of electrostatic charging induced by energetic ion beams impinging on the surface during processing. Moreoever for damage protection the wafer may be covered by a protective oxide which inhibits the majority of secondary electrons in the exposure path from reaching the wafer surface. Previous work has shown that the surface barrier of the oxidized surface does not change significantly when flood guns are used which supports this premise. However, in this work we are interested in what effects the electron exposure may have on the oxide potential.

Paper Details

Date Published: 18 September 1995
PDF: 10 pages
Proc. SPIE 2638, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing II, (18 September 1995); doi: 10.1117/12.221195
Show Author Affiliations
Alan Stuber, Advanced Micro Devices, Inc. (United States)
John K. Lowell, Advanced Micro Devices, Inc. and NSF Science and Technology Ctr. (United States)


Published in SPIE Proceedings Vol. 2638:
Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing II
John K. Lowell; Ray T. Chen; Jagdish P. Mathur, Editor(s)

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