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Proceedings Paper

TD formation in CZ-silicon annealed at 450 degrees C in air ambient
Author(s): Shyam Singh; Om Prakash
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Paper Abstract

Exact kinetics of donor formation and possible number of oxygen atoms in a single TD are two aspects out of many problems related with oxygen related donors in CZ-silicon, which carry a mark of interrogation. Boron doped p-type silicon wafers were annealed in air ambient at 450 degrees C for different durations and subjected to resistivity and FTIR studies. It was observed that ambients do not affect the process of TD generation. Successive increase in annealing times results in the exponential growth of donors with a maximum of approximately 1.79 X 1017 cm-3 obtained in our samples annealed for 55 hours only. Annealing also caused a gradual decrease in absorption coefficient. Maximum observed value of oxygen and carbon precipitations was 2.362 ppma and 1.100 ppma respectively. The diffusion coefficient for oxygen was found to be approximately 4.17 X 10-19 cm-9S-1. The oxygen and carbon reduction followed the second order kinetics. The activiation energy was approximately 0.823 eV and the number of oxygen atoms in a single TD may be 7.

Paper Details

Date Published: 18 September 1995
PDF: 8 pages
Proc. SPIE 2638, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing II, (18 September 1995); doi: 10.1117/12.221190
Show Author Affiliations
Shyam Singh, G. B. Pant Univ. of Agriculture and Technology (India)
Om Prakash, G. B. Pant Univ. of Agriculture and Technology (India)


Published in SPIE Proceedings Vol. 2638:
Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing II
John K. Lowell; Ray T. Chen; Jagdish P. Mathur, Editor(s)

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