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Proceedings Paper

Influence of oxygen-iron interaction on the external gettering of Fe in p-Si by polycrystalline silicon film
Author(s): Kamal K. Mishra; Mark Stinson; John K. Lowell
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Paper Abstract

External gettering of iron by thin polycrystalline silicon film in p-type CA silicon has been investigated using deep level transient spectroscopy, and the surface photovoltage method. Depth profiles of iron concentration indicated a sharp gradient in the Fe concentration near the polycrystalline silicon/substrate interface. Concurrent decrease in the micority carrier diffusion length was also observed in the same region. The majority of iron gettering from the bulk silicon was found to be associated with the enhancement of the internal gettering. The presence of small oxygen precipitates/nuclei generated by prolonged heat treatment in the range of 600C-700C was found to prevent regeneration of FeB pairs at the room temperature. Similarily, carbon in the bulk silicon was found to retard the regeneration of the pairs. On the other hand, large precipitates formed at 1000C do not influence the diffusion or the recombination of Fei with B- to form FeB pairs.

Paper Details

Date Published: 18 September 1995
PDF: 8 pages
Proc. SPIE 2638, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing II, (18 September 1995); doi: 10.1117/12.221189
Show Author Affiliations
Kamal K. Mishra, MEMC Electronic Materials, Inc. (United States)
Mark Stinson, MEMC Electronic Materials, Inc. (United States)
John K. Lowell, Advanced Micro Devices, Inc. (United States)


Published in SPIE Proceedings Vol. 2638:
Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing II
John K. Lowell; Ray T. Chen; Jagdish P. Mathur, Editor(s)

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