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Proceedings Paper

Observation of graphene growing process on SiC(0001) surface formed by KrF excimer-laser irradiation
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Paper Abstract

Observation of graphene growing process on SiC(0001) step and terrace structure formed by direct laser patterning is proposed. We have proposed a novel method of direct growth of patterned graphene on SiC(0001) surfaces using KrF excimer-laser irradiation. KrF excimer-laser with a wavelength of 248 nm and a duration of 55 ns was used to graphene forming in this study. Laser irradiation was achieved with various laser fluenece. Grain size and number of layers of the graphene was varied by laser irradiation condition. Through conductive atomic force microscopy, it was observed that graphene grain expanded from (112 _ n) faced step area to (0001) faced terrace area in initial graphene growth process. From the result of the Raman spectroscopy, transmission electron microscopy and Conductive AFM, we summarized graphene growth process on SiC(0001) surfaces.

Paper Details

Date Published: 14 March 2016
PDF: 6 pages
Proc. SPIE 9735, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXI, 97350Y (14 March 2016); doi: 10.1117/12.2211865
Show Author Affiliations
Masakazu Hattori, Kyushu Univ. (Japan)
Hiroshi Ikenoue, Kyushu Univ. (Japan)
Daisuke Nakamura, Kyushu Univ. (Japan)
Tatsuo Okada, Kyushu Univ. (Japan)


Published in SPIE Proceedings Vol. 9735:
Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXI
Beat Neuenschwander; Stephan Roth; Costas P. Grigoropoulos; Tetsuya Makimura, Editor(s)

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