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Proceedings Paper

Significant improvement of GaN crystal quality with ex-situ sputtered AlN nucleation layers
Author(s): Shuo-Wei Chen; Young Yang; Wei-Chih Wen; Heng Li; Tien-Chang Lu
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Paper Abstract

Ex-situ sputtered AlN nucleation layer has been demonstrated effective to significantly improve crystal quality and electrical properties of GaN epitaxy layers for GaN based Light-emitting diodes (LEDs). In this report, we have successfully reduced X-ray (102) FWHM from 240 to 110 arcsec, and (002) FWHM from 230 to 101 arcsec. In addition, reverse-bias voltage (Vr) increased around 20% with the sputtered AlN nucleation layer. Furthermore, output power of LEDs grown on sputtered AlN nucleation layer can be improved around 4.0% compared with LEDs which is with conventional GaN nucleation layer on pattern sapphire substrate (PSS).

Paper Details

Date Published: 8 March 2016
PDF: 9 pages
Proc. SPIE 9768, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX, 97681D (8 March 2016); doi: 10.1117/12.2211721
Show Author Affiliations
Shuo-Wei Chen, National Chiao Tung Univ. (Taiwan)
Epistar Corp. (Taiwan)
Young Yang, Epistar Corp. (Taiwan)
Wei-Chih Wen, Epistar Corp. (Taiwan)
Heng Li, National Chiao Tung Univ. (Taiwan)
Tien-Chang Lu, National Chiao Tung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 9768:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX
Heonsu Jeon; Li-Wei Tu; Michael R. Krames; Martin Strassburg, Editor(s)

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