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Proceedings Paper

Low temperature preparation of Ag-doped ZnO nanowire arrays for sensor and light-emitting diode applications
Author(s): O. Lupan; B. Viana; V. Cretu; V. Postica; R. Adelung; T. Pauporté
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Paper Abstract

Transition metal doped-oxide semiconductor nanostructures are important to achieve enhanced and new properties for advanced applications. We describe the low temperature preparation of ZnO:Ag nanowire/nanorod (NW/NR) arrays by electrodeposition at 90 °C. The NWs have been characterized by SEM, EDX, transmittance and photoluminescence (PL) measurements. The integration of Ag in the crystal is shown. Single nanowire/nanorod of ZnO:Ag was integrated in a nanosensor structure leading to new and enhanced properties. The ultraviolet (UV) response of the nanosensor was investigated at room temperature. Experimental results indicate that ZnO:Ag (0.75 μM) nanosensor possesses faster response/recovery time and better response to UV light than those reported in literature. The sensor structure has been also shown to give a fast response for the hydrogen detection with improved performances compared to pristine ZnO NWs. ZnO:Ag nanowire/nanorod arrays electrochemically grown on p-type GaN single crystal layer is also shown to act as light emitter in LED structures. The emission wavelength is red-shifted compared to pristine ZnO NW array. At low Ag concentration a single UV-blue emission is found whereas at higher concentration of dopant the emission is broadened and extends up to the red wavelength range. Our study indicates that high quality ZnO:Ag NW/NR prepared at low temperature by electrodeposition can serve as building nanomaterials for new sensors and light emitting diodes (LEDs) structures with low-power consumption.

Paper Details

Date Published: 27 February 2016
PDF: 8 pages
Proc. SPIE 9749, Oxide-based Materials and Devices VII, 97490U (27 February 2016); doi: 10.1117/12.2211717
Show Author Affiliations
O. Lupan, Institut de Recherche de Chimie Paris (France)
Technical Univ. of Moldova (Moldova)
Christian Albrechts Univ. of Kiel (Germany)
B. Viana, Institut de Recherche de Chimie Paris (France)
V. Cretu, Technical Univ. of Moldova (Moldova)
V. Postica, Technical Univ. of Moldova (Moldova)
R. Adelung, Christian Albrechts Univ. of Kiel (Germany)
T. Pauporté, Institut de Recherche de Chimie Paris (France)

Published in SPIE Proceedings Vol. 9749:
Oxide-based Materials and Devices VII
Ferechteh H. Teherani; David C. Look; David J. Rogers, Editor(s)

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