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Proceedings Paper

Black silicon-based infrared radiation source
Author(s): Momen Anwar; Yasser Sabry; Philippe Basset; Frédéric Marty; Tarik Bourouina; Diaa Khalil
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Paper Abstract

Micromachined infrared sources are enabling component for interferometric and spectroscopic sensors. Their compact size and low cost transform bulky instruments to the sensor scale, which is needed for a wide range of applications in the conventional and unconventional environments. The silicon micromachined sources should be engineered to have good emissivity across a large wavelength range because the intrinsic emissivity of silicon is low. This optimization was reported in literature by either the deposition of black metal at the surface of an emitter or the use of deep phonic crystal cavities, which complicates the fabrication technology and results in sharp dip lines in the spectral emissivity, respectively. In this work we report a micromachined infrared radiation source based on a heater on the top of black silicon structure for the first time in the literature, up to the authors’ knowledge. The temperature of the device is characterized versus the applied voltage and the radiated spectrum is captured in the 1300 nm to 2500 nm spectral range; limited by the spectrum analysis instrument. The reported source opens the doors for completely integrated MEMS spectral sensors onchip.

Paper Details

Date Published: 14 March 2016
PDF: 6 pages
Proc. SPIE 9752, Silicon Photonics XI, 97520E (14 March 2016); doi: 10.1117/12.2211668
Show Author Affiliations
Momen Anwar, Ain-Shams Univ. (Egypt)
Si-Ware Systems (Egypt)
Yasser Sabry, Ain-Shams Univ. (Egypt)
Si-Ware Systems (Egypt)
Philippe Basset, Univ Paris-EST, Lab. ESYCOM, ESIEE Paris (France)
Frédéric Marty, Univ Paris-EST, Lab. ESYCOM, ESIEE Paris (France)
Tarik Bourouina, Si-Ware Systems (Egypt)
Univ Paris-EST, Lab. ESYCOM, ESIEE Paris (France)
Diaa Khalil, Ain-Shams Univ. (Egypt)
Si-Ware Systems (Egypt)

Published in SPIE Proceedings Vol. 9752:
Silicon Photonics XI
Graham T. Reed; Andrew P. Knights, Editor(s)

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