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Proceedings Paper

Red InGaP light-emitting diodes epitaxially grown on engineered Ge-on-Si substrates
Author(s): Bing Wang; Cong Wang; Kwang Hong Lee; Shuyu Bao; Kenneth Eng Kian Lee; Chuan Seng Tan; Soon Fatt Yoon; Eugene A. Fitzgerald; Jurgen Michel
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Paper Abstract

The integration of light emitting devices on silicon substrates has attracted intensive research for many years. In contrast to the InGaN light emitting diodes (LEDs) whose epitaxy technology on Si substrates is robust and mature, the epitaxy of other compound semiconductor light emitting materials covering the visible wavelength range on Si is still challenging. We have studied epitaxial growth of red InGaP light emitting materials on engineered Ge-on-Si substrates. Ge-on-Si was grown on 8’’ Si substrates in a metal organic chemical vapour deposition (MOCVD) reactor using two- step growth and cycling annealing. Threading dislocation densities (TDDs) were controlled to as low as 106/cm2 by using As-doped Ge initiation. A GaAs buffer layer and lattice-matched InGaP LEDs were grown on the Ge-on-Si sequentially in the same MOCVD process and red LEDs are demonstrated. InGaP multiple-quantum-well LED structures were grown on full 8’’ Ge-on-Si substrates and characterized.

Paper Details

Date Published: 8 March 2016
PDF: 6 pages
Proc. SPIE 9768, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX, 97681J (8 March 2016); doi: 10.1117/12.2211562
Show Author Affiliations
Bing Wang, Singapore-MIT Alliance for Research and Technology (Singapore)
Cong Wang, Singapore-MIT Alliance for Research and Technology (Singapore)
Nanyang Technological Univ. (Singapore)
Kwang Hong Lee, Singapore-MIT Alliance for Research and Technology (Singapore)
Shuyu Bao, Singapore-MIT Alliance for Research and Technology (Singapore)
Nanyang Technological Univ. (Singapore)
Kenneth Eng Kian Lee, Singapore-MIT Alliance for Research and Technology (Singapore)
Chuan Seng Tan, Singapore-MIT Alliance for Research and Technology (Singapore)
Nanyang Technological Univ. (Singapore)
Soon Fatt Yoon, Singapore-MIT Alliance for Research and Technology (Singapore)
Nanyang Technological Univ. (Singapore)
Eugene A. Fitzgerald, Singapore-MIT Alliance for Research and Technology (Singapore)
Massachusetts Institute of Technology (United States)
Jurgen Michel, Singapore-MIT Alliance for Research and Technology (Singapore)
Massachusetts Institute of Technology (United States)


Published in SPIE Proceedings Vol. 9768:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX
Heonsu Jeon; Li-Wei Tu; Michael R. Krames; Martin Strassburg, Editor(s)

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