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Proceedings Paper

High-frequency BJT-mode operated MOS structure
Author(s): Iulian Gradinariu; Christian Gontrand
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Paper Abstract

The paper presents a novel PNP-type BJT-mode operated MOS structure that significantly pushes up the cut-off frequency limit, without necessarily employing submicron patterning. In order to reach the requested high speed, the base width (channel length) is rendered independent of processes minimum feature and the excess minority carriers charge in the extrinsic base is reduced using an insulation technique. Full bulk hole mobility is obtained by operating the MOS structure in 'purely BJT- mode'. The proposed device is fully compatible with standard recessed LOCOS single-polysilicon BiCMOS processes and offers a valid alternative to shallow polysilicon emitter vertical PNP-type transistors. Our CAD simulations yielded maximum cut-off frequencies of 2.45 GHz, 3.05 GHz and 5.65 GHz for 2 micrometers , 1 micrometers and 0.4 micrometers minimum feature structures, respectively.

Paper Details

Date Published: 15 September 1995
PDF: 9 pages
Proc. SPIE 2636, Microelectronic Device and Multilevel Interconnection Technology, (15 September 1995); doi: 10.1117/12.221152
Show Author Affiliations
Iulian Gradinariu, INSA de Lyon (France)
Christian Gontrand, INSA de Lyon (France)


Published in SPIE Proceedings Vol. 2636:
Microelectronic Device and Multilevel Interconnection Technology
Ih-Chin Chen; Girish A. Dixit; Trung Tri Doan; Nobuo Sasaki, Editor(s)

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