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Proceedings Paper

Effects of PE-TEOS process on O3-TEOS characteristics and device reliability
Author(s): Syun-Ming Jang; Yu-Min Lin; Peter Lee; L. M. Liu; C. H. Yu; Tan Fu Lei; M. S. Lin
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Paper Abstract

This work studies the effect of PE-TEOS underlayer on O3-TEOS based intermetal dielectric (IMD) in terms of gap filling, moisture resistance, and device reliability. PE-TEOS films investigated here were formed by mixed-frequency plasma process and were differed by their reaction oxidizers and/or plasma powers. It is found that the bottom and sidewall step coverages of PE-TEOS vary with processing conditions, with both degrading as nitrogen content or film stress increases. By optimizing the underlayer thickness voidless gap fill has been achieved by O3-TEOS for 0.5 micrometers generation. To eliminate moisture absorption the deposited O3-TEOS was then integrated with SOG etchback for planarization. The integrated IMD has been evaluated by hot carrier stressing, which suggests that increasing PE-TEOS stress helps improve device reliability. For a fixed stress, the increased amount of oxygen or nitrogen also help inhibit hot carrier aging. To obtain best device reliability, a tradeoff exists between the moisture resistance and gap filling capability of PE-TEOS underlayer.

Paper Details

Date Published: 15 September 1995
PDF: 10 pages
Proc. SPIE 2636, Microelectronic Device and Multilevel Interconnection Technology, (15 September 1995); doi: 10.1117/12.221145
Show Author Affiliations
Syun-Ming Jang, Taiwan Semiconductor Manufacturing Co. (Taiwan)
Yu-Min Lin, National Chiao-Tung Univ. (Taiwan)
Peter Lee, Applied Materials, Inc. (United States)
L. M. Liu, Taiwan Semiconductor Manufacturing Co. (Taiwan)
C. H. Yu, Taiwan Semiconductor Manufacturing Co. (Taiwan)
Tan Fu Lei, National Chiao-Tung Univ. (Taiwan)
M. S. Lin, Taiwan Semiconductor Manufacturing Co. (Taiwan)


Published in SPIE Proceedings Vol. 2636:
Microelectronic Device and Multilevel Interconnection Technology
Ih-Chin Chen; Girish A. Dixit; Trung Tri Doan; Nobuo Sasaki, Editor(s)

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