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Proceedings Paper

Dependence of MOSFET hot-carrier aging on PECVD oxide process
Author(s): L. K. Han; D. Allman; Dim-Lee Kwong
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Paper Abstract

This paper studies the effect of PECVD oxide process in the sandwiched SOG structure for interlevel dielectric applications on MOSFET hot- carrier reliability. Both silane-based oxide (OX) and tetraethylorthosilicate-based oxide (TEOS) were used to form various combinations with SOG as interlevel dielectrics. The influence of N2O (N2O-TEOS) and O2 (O2-TEOS) as the source gas of oxygen during the PECVD TEOS deposition was also studied. Results indicate that O2-TEOS/SOG/O2-TEOS increased the number of electron traps in the gate oxide and deteriorate SiO2/Si interface characteristics, thus reducing device lifetime. In addition, the use of OX to replace any one of the O2-TEOS layers improves hot-carrier immunity considerably. Finally, N2-TEOS/SOG/OX is shown to be a very promising process due to its conformal nature over OX/SOG/OX and improved reliability over O2-TEOS/SOG/OX.

Paper Details

Date Published: 15 September 1995
PDF: 8 pages
Proc. SPIE 2636, Microelectronic Device and Multilevel Interconnection Technology, (15 September 1995); doi: 10.1117/12.221144
Show Author Affiliations
L. K. Han, Univ. of Texas/Austin (United States)
D. Allman, Symbios Logic Inc. (United States)
Dim-Lee Kwong, Univ. of Texas/Austin (United States)

Published in SPIE Proceedings Vol. 2636:
Microelectronic Device and Multilevel Interconnection Technology
Ih-Chin Chen; Girish A. Dixit; Trung Tri Doan; Nobuo Sasaki, Editor(s)

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