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Proceedings Paper

Quantum well intermixing and radiation effects in InGaN/GaN multi quantum wells
Author(s): K. Lorenz; A. Redondo-Cubero; M. B. Lourenço; M. C. Sequeira; M. Peres; A. Freitas; L. C. Alves; E. Alves; M. P. Leitão; J. Rodrigues; N. Ben Sedrine; M. R. Correia; T. Monteiro
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Paper Abstract

Compositional grading of InGaN/GaN multi quantum wells (QWs) was proposed to mitigate polarization effects and Auger losses in InGaN-based light emitting diodes [K. P. O'Donnell et al., Phys. Status Solidi RRL 6 (2012) 49]. In this paper we are reviewing our recent attempts on achieving such gradient via quantum well intermixing. Annealing up to 1250 °C resulted in negligible interdiffusion of QWs and barriers revealing a surprising thermal stability well above the typical MOCVD growth temperatures. For annealing at 1400 °C results suggest a decomposition of the QWs in regions with high and low InN content. The defect formation upon nitrogen implantation was studied in detail. Despite strong dynamic annealing effects, which keep structural damage low, the created defects strongly quench the QW luminescence even for low implantation fluences. This degradation could not be reversed during thermal annealing and is hampering the use of implantation induced quantum well intermixing in InGaN/GaN structures.

Paper Details

Date Published: 26 February 2016
PDF: 9 pages
Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 97480L (26 February 2016); doi: 10.1117/12.2211429
Show Author Affiliations
K. Lorenz, Instituto Superior Técnico (Portugal)
A. Redondo-Cubero, Instituto Superior Técnico (Portugal)
Univ. Autónoma de Madrid (Spain)
M. B. Lourenço, Instituto Superior Técnico (Portugal)
M. C. Sequeira, Instituto Superior Técnico (Portugal)
M. Peres, Instituto Superior Técnico (Portugal)
A. Freitas, Instituto Superior Técnico (Portugal)
L. C. Alves, Instituto Superior Técnico (Portugal)
E. Alves, Instituto Superior Técnico (Portugal)
M. P. Leitão, Univ. de Aveiro (Portugal)
J. Rodrigues, Univ. de Aveiro (Portugal)
N. Ben Sedrine, Univ. de Aveiro (Portugal)
M. R. Correia, Univ. de Aveiro (Portugal)
T. Monteiro, Univ. de Aveiro (Portugal)


Published in SPIE Proceedings Vol. 9748:
Gallium Nitride Materials and Devices XI
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç; Yasushi Nanishi; Ulrich T. Schwarz; Jong-In Shim, Editor(s)

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