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Proceedings Paper

Submicron patterning of AlSiCu/TiN and AlSiCu/TiW films
Author(s): Simon Y. M. Chooi; Fang Hong Gn; Lap Hung Chan
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Paper Abstract

As part of our continued studies into improving the performance of multilevel interconnect schemes, we have investigated the film properties and etchability of the AlSiCu/TiN and AlSiCu/TiW film stacks. In this study, two different types of TiN film were deposited by reactive sputtering: low-density (LD) TiN and high-density (HD) TiN. Low-density TiN film was found to have greater oxygen stuffing capability. Both the AlSiCu/TiN and AlSiCu/TiW film stacks can be easily etched anisotropically using high density plasma technology. Barrier integrity of these two film stacks was analyzed by high temperature furnace stress.

Paper Details

Date Published: 15 September 1995
PDF: 11 pages
Proc. SPIE 2636, Microelectronic Device and Multilevel Interconnection Technology, (15 September 1995); doi: 10.1117/12.221141
Show Author Affiliations
Simon Y. M. Chooi, Chartered Semiconductor Manufacturing Pte Ltd. (Singapore)
Fang Hong Gn, Chartered Semiconductor Manufacturing Pte Ltd. (Singapore)
Lap Hung Chan, Chartered Semiconductor Manufacturing Pte Ltd. (Singapore)


Published in SPIE Proceedings Vol. 2636:
Microelectronic Device and Multilevel Interconnection Technology
Ih-Chin Chen; Girish A. Dixit; Trung Tri Doan; Nobuo Sasaki, Editor(s)

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