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Proceedings Paper

Formation of TiN films by metal organic chemical vapor deposition using TDEAT
Author(s): Jaegab Lee; Jaeho Kim; Choogsoo Chi; Sangjoon Park; Kyung-Il Lee; Jaejeong Kim
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Paper Abstract

The effect of carrier gases such as nitrogen (N2) and helium (He) on the properties, growth rate, and conformality of TiN films form tetrakis-diethylamido-titanium (TDEAT) has been investigated. TiN growth rate and properties are significantly influenced by carrier gases. He carrier gas lowers the growth rate and yields the films with low resistivities (approximately equals 2000 (mu) (Omega) -cm) and low level of oxygen contamination. Noted that the resistivity does not increase further upon air-exposure. On the contrary, N2 carrier gas produces TiN films with relatively high resistivities (<EQ 4000 (mu) (Omega) -cm) and high level oxygen contamination. Moreover, the resistivity continues to change with time. AES analysis shows that the different air-sensitivity of TiN films deposited using two carrier gases is attributed to the presence of oxygen in the films. In addition, TDEAT single sourced process provides the step coverage of 18approximately equals 65% in 2.0 aspect ratio contracts and He carrier gas improves the step coverage slightly, compared with N2 carrier gas. Furthermore, study of the TDEAT/NH3 system reveals that sufficient NH3 addition does not degrade the conformality of TiN films and lowers the resistivity, irrespective of carrier gas.

Paper Details

Date Published: 15 September 1995
PDF: 8 pages
Proc. SPIE 2636, Microelectronic Device and Multilevel Interconnection Technology, (15 September 1995); doi: 10.1117/12.221138
Show Author Affiliations
Jaegab Lee, Kookmin Univ. (South Korea)
Jaeho Kim, Kookmin Univ. (South Korea)
Choogsoo Chi, Kookmin Univ. (South Korea)
Sangjoon Park, Apex Co. Ltd. (South Korea)
Kyung-Il Lee, LG Semicon Co., Ltd. (South Korea)
Jaejeong Kim, LG Semicon Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 2636:
Microelectronic Device and Multilevel Interconnection Technology
Ih-Chin Chen; Girish A. Dixit; Trung Tri Doan; Nobuo Sasaki, Editor(s)

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