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Proceedings Paper

Integral contact process in submicron technology
Author(s): Yu-Hua Lee; Bing-Yue Tsui
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Paper Abstract

in the down-scaling of DRAM (dynamics random access memory) cell size, feature size control becomes a severe problem. Usually we define +/- I 0% of minimum feature size for its process window, e.g., for O.5trn process, its variation should be well controlled within O.O5tm to guarantee production reliability.

Paper Details

Date Published: 15 September 1995
PDF: 12 pages
Proc. SPIE 2636, Microelectronic Device and Multilevel Interconnection Technology, (15 September 1995); doi: 10.1117/12.221136
Show Author Affiliations
Yu-Hua Lee, Industrial Technology Research Institute (Taiwan)
Bing-Yue Tsui, Industrial Technology Research Institute (Taiwan)


Published in SPIE Proceedings Vol. 2636:
Microelectronic Device and Multilevel Interconnection Technology
Ih-Chin Chen; Girish A. Dixit; Trung Tri Doan; Nobuo Sasaki, Editor(s)

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