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Proceedings Paper

Electrical characteristics of n- and p-MOSFETs with N2O-reoxidized NH3-nitrided N2O oxides as gate dielectrics
Author(s): L. K. Han; Hai-Hong Wang; Jason Yan; Jin-ha Kim; G. W. Yoon; Dim-Lee Kwong
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Paper Abstract

In this paper, we have systematically investigated the effects of NH3 nitridation of N2O oxides and subsequent reoxidation on MOSFET performance and reliability. Results indicate that as compared to oxides grown in pure O2 or N2O ambient, NH3 nitridation of N2O oxides (with or without reoxidation) slightly degrades the electron mobility ((mu) e,eff) of n-MOSFETs at low VG, but enhances (mu) e,eff significantly at high VG. For p-MOSFETs, nitridation of N2O oxides degrades hole mobility ((mu) h,eff) slightly for all VG. In addition, reoxidation of NH3-nitrided N2O oxides is required to improve the hot-carrier immunity for both n- and p-MOSFETs under various static bias configurations, with N2O-reoxidation being considerable more effective than O2-reoxidation. It is demonstrated that N2O reoxidation is capable of completely removing nitridation- induced electron traps, resulting in devices with hot-carrier reliability comparable to N2O oxide devices. The superior reliability characteristics together with demonstrated improved resistance to boron penetration make N2O-reoxidized NH3-nitrided N2O oxides a very promising gate dielectric candidate for deep- submicrometer dual-gate CMOS applications.

Paper Details

Date Published: 15 September 1995
PDF: 10 pages
Proc. SPIE 2636, Microelectronic Device and Multilevel Interconnection Technology, (15 September 1995); doi: 10.1117/12.221134
Show Author Affiliations
L. K. Han, Univ. of Texas/Austin (United States)
Hai-Hong Wang, Univ. of Texas/Austin (United States)
Jason Yan, Univ. of Texas/Austin (United States)
Jin-ha Kim, Univ. of Texas/Austin (United States)
G. W. Yoon, Univ. of Texas/Austin (United States)
Dim-Lee Kwong, Univ. of Texas/Austin (United States)


Published in SPIE Proceedings Vol. 2636:
Microelectronic Device and Multilevel Interconnection Technology
Ih-Chin Chen; Girish A. Dixit; Trung Tri Doan; Nobuo Sasaki, Editor(s)

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