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Proceedings Paper

Hybrid integration of carbon nanotubes into silicon slot photonic structures
Author(s): E. Durán Valdeiglesias; W. Zhang; H. C. Hoang; C. Alonso-Ramos; A. Noury; S. Serna; X. Le Roux; E. Cassan; N. Izard; F. Sarti; U. Torrini; M. Balestrieri; A.-S. Keita; H. Yang; V. Bezugly; A. Vinattieri; G. Cuniberti; A. Filoramo; M. Gurioli; L. Vivien
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Paper Abstract

Silicon photonics, due to its compatibility with the CMOS platform and unprecedented integration capability, has become the preferred solution for the implementation of next generation optical interconnects. However, current Si photonics require on-chip integration of several materials, including III-V for lasing, doped silicon for modulation and Ge for detection. The very different requirements of these materials result in complex fabrication processes that offset the cost-effectiveness of the Si photonics approach. We are developing an alternative route towards the integration of optoelectronic devices in Si photonic, relying on the use of single wall carbon nanotubes (SWNTs). SWNTs can be considered as a Si compatible material able to emit, modulate and detect near-infrared light. Hence, they hold a unique potential to implement all active devices in the Si photonics platform. In addition, solution processed SWNTs can be integrated on Si using spin-coating techniques, obviating the need of complex epitaxial growth or chip bonding approaches. Here, we report on our recent progress in the coupling of SWNTs light emission into optical resonators implemented on the silicon-on-insulator (SOI) platform.

Paper Details

Date Published: 14 March 2016
PDF: 7 pages
Proc. SPIE 9752, Silicon Photonics XI, 97520D (14 March 2016); doi: 10.1117/12.2211317
Show Author Affiliations
E. Durán Valdeiglesias, Institut d'Electronique Fondamentale, Univ. Paris-Sud 11, Univ. Paris-Saclay, CNRS (France)
W. Zhang, Institut d'Electronique Fondamentale, Univ. Paris-Sud 11, Univ. Paris-Saclay, CNRS (France)
H. C. Hoang, Institut d'Electronique Fondamentale, Univ. Paris-Sud 11, Univ. Paris-Saclay, CNRS (France)
C. Alonso-Ramos, Institut d'Electronique Fondamentale, Univ. Paris-Sud 11, Univ. Paris-Saclay, CNRS (France)
A. Noury, Institut d'Electronique Fondamentale, Univ. Paris-Sud 11, Univ. Paris-Saclay, CNRS (France)
S. Serna, Institut d'Electronique Fondamentale, Univ. Paris-Sud 11, Univ. Paris-Saclay, CNRS (France)
X. Le Roux, Institut d'Electronique Fondamentale, Univ. Paris-Sud 11, Univ. Paris-Saclay, CNRS (France)
E. Cassan, Institut d'Electronique Fondamentale, Univ. Paris-Sud 11, Univ. Paris-Saclay, CNRS (France)
N. Izard, Institut d'Electronique Fondamentale, Univ. Paris-Sud 11, Univ. Paris-Saclay, CNRS (France)
F. Sarti, Univ. degli Studi di Firenze (Italy)
U. Torrini, Univ. degli Studi di Firenze (Italy)
M. Balestrieri, CEA, Univ. Paris-Saclay, CNRS (France)
A.-S. Keita, CEA, Univ. Paris-Saclay, CNRS (France)
H. Yang, TU Dresden (Germany)
V. Bezugly, TU Dresden (Germany)
A. Vinattieri, CEA, Univ. Paris-Saclay, CNRS (France)
G. Cuniberti, TU Dresden (Germany)
A. Filoramo, CEA, Univ. Paris-Saclay, CNRS (France)
M. Gurioli, Univ. degli Studi di Firenze (Italy)
L. Vivien, Institut d'Electronique Fondamentale, Univ. Paris-Sud 11, Univ. Paris-Saclay, CNRS (France)


Published in SPIE Proceedings Vol. 9752:
Silicon Photonics XI
Graham T. Reed; Andrew P. Knights, Editor(s)

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