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Proceedings Paper

Novel LOCOS isolation process for producing highly reliable oxides
Author(s): Mark I. Gardner; Daniel Kadoch
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Paper Abstract

As device dimensions become scaled to the deep sub-micron regime, the field oxidation process is most significant in achieving reliable oxide quality in gate and LOCOS edge regions. Overall, the role of the field oxide must be to provide excellent isolation and to remain reliable at the LOCOS edge and have minimum encroachment.

Paper Details

Date Published: 15 September 1995
PDF: 9 pages
Proc. SPIE 2636, Microelectronic Device and Multilevel Interconnection Technology, (15 September 1995); doi: 10.1117/12.221131
Show Author Affiliations
Mark I. Gardner, Advanced Micro Devices, Inc. (United States)
Daniel Kadoch, Advanced Micro Devices, Inc. (United States)


Published in SPIE Proceedings Vol. 2636:
Microelectronic Device and Multilevel Interconnection Technology
Ih-Chin Chen; Girish A. Dixit; Trung Tri Doan; Nobuo Sasaki, Editor(s)

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