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Proceedings Paper

N2O-based tunnel oxides
Author(s): Jack C. Lee; Anthony I. Chou; Kafai Lai; Kiran Kumar
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Paper Abstract

Scaling down of the tunnel oxides allows reduction of the internal programming voltages and the memory cell size, and simplification of the peripheral circuit design related to highvoltage operation. However, several serious factors limit the scaling down of conventional thermal oxides. This includes the reduction in endurance which is related to charge trapping and time-dependent dielectric breakdown of the tunnel oxide. Leakage currents such as stressinduced leakage current and direct tunneling current are becoming a dominant factor as thicknesses are scaled down. Other factors that might limit the scaling of conventional thermally grown oxides include high defect and pinhole density which affect the manufacturing yield and device reliability, the ineffectiveness of thermal oxides in blocking diffusion of dopants, metals and impurities, excessive interface state density generation under various types of electrical and radiation stresses, and inadequate charge-to-breakdown and time-to-breakdown values. Furthermore, it has been reported that post-oxidation processes such as plasma exposure during metal etching can degrade thin oxides.

Paper Details

Date Published: 15 September 1995
PDF: 8 pages
Proc. SPIE 2636, Microelectronic Device and Multilevel Interconnection Technology, (15 September 1995); doi: 10.1117/12.221130
Show Author Affiliations
Jack C. Lee, Univ. of Texas/Austin (United States)
Anthony I. Chou, Univ. of Texas/Austin (United States)
Kafai Lai, Univ. of Texas/Austin (United States)
Kiran Kumar, Univ. of Texas/Austin (United States)


Published in SPIE Proceedings Vol. 2636:
Microelectronic Device and Multilevel Interconnection Technology
Ih-Chin Chen; Girish A. Dixit; Trung Tri Doan; Nobuo Sasaki, Editor(s)

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