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Proceedings Paper

Study of carrier lifetime of silicon by OPTP method
Author(s): Lei Hou; Xianjin Shao; Lei Yang; Zhiquan Wang; Like Zhang; Mengmeng Zhao; Wei Shi
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Paper Abstract

To analyze the carrier lifetime of Si, a 0.4 mm thickness high-resistivity silicon had been investigated by the optical-pump-terahertz-probe (OPTP) system. The terahertz time domain curve and frequency spectrum (bandwidth of > 6THz) of Si are achieved by the time domain spectroscopy mode, and its characteristic parameters, including refractive index and absorption coefficient, were obtained. And the carrier lifetime of Si was measured by the OPTP mode, the result is about 905 ps.

Paper Details

Date Published: 5 November 2015
PDF: 6 pages
Proc. SPIE 9795, Selected Papers of the Photoelectronic Technology Committee Conferences held June–July 2015, 97950Q (5 November 2015); doi: 10.1117/12.2211296
Show Author Affiliations
Lei Hou, Xi’an Univ. of Technology (China)
Xianjin Shao, Xi’an Univ. of Technology (China)
Lei Yang, Xi'an Univ. of Technology (China)
Zhiquan Wang, Xi'an Univ. of Technology (China)
Like Zhang, Xi'an Univ. of Technology (China)
Mengmeng Zhao, Xi'an Univ. of Technology (China)
Wei Shi, Xi'an Univ. of Technology (China)


Published in SPIE Proceedings Vol. 9795:
Selected Papers of the Photoelectronic Technology Committee Conferences held June–July 2015
Shenggang Liu; Songlin Zhuang; Michael I. Petelin; Libin Xiang, Editor(s)

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