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Proceedings Paper

Integrity of N2O oxides in WSi2 polycide process
Author(s): Chung Jen Chien; Jeong Yeol Choi; Guo-Qiang Lo; Chuen-Der Lien
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Paper Abstract

This paper reports on the integrity of thin N2O oxides in tungsten polycide (poly-Si/WSi2 stack) gated MOS structures, which was characterized by their charge-to-breakdown (QBD). In this study, WSi2 films were formed either by chemical vapor deposition (CVD) or sputtering. It is found that with CVD-WSi2 gate, N2O gate oxide has a much degraded integrity in terms of high infant-mortality rate and low QBD values compared with the sputtered WSi2 gate.

Paper Details

Date Published: 15 September 1995
PDF: 5 pages
Proc. SPIE 2636, Microelectronic Device and Multilevel Interconnection Technology, (15 September 1995); doi: 10.1117/12.221128
Show Author Affiliations
Chung Jen Chien, Integrated Device Technology (United States)
Jeong Yeol Choi, Integrated Device Technology (United States)
Guo-Qiang Lo, Integrated Device Technology (United States)
Chuen-Der Lien, Integrated Device Technology (United States)


Published in SPIE Proceedings Vol. 2636:
Microelectronic Device and Multilevel Interconnection Technology
Ih-Chin Chen; Girish A. Dixit; Trung Tri Doan; Nobuo Sasaki, Editor(s)

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