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Proceedings Paper

Optimizing the performance of advanced nonvolatile memories using differentiated cell source and drain implants
Author(s): Martin Duncan; P. Pansana
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Paper Abstract

In order to satisfy the twin requirements of increased performance at low cost, a novel architecture that allows the differentiation of the source and drain implants of an EPROM cell without any additional processing steps has been developed. This cell is more immune to electrical stress than a standard cell during both programming and read cycles. In addition, this cell is inherently electrically shorter and therefore can be used to reduce die size in advanced EPROM devices.

Paper Details

Date Published: 15 September 1995
PDF: 9 pages
Proc. SPIE 2636, Microelectronic Device and Multilevel Interconnection Technology, (15 September 1995); doi: 10.1117/12.221126
Show Author Affiliations
Martin Duncan, SGS-Thomson Microelectronics, Inc. (Italy)
P. Pansana, SGS-Thomson Microelectronics, Inc. (Italy)


Published in SPIE Proceedings Vol. 2636:
Microelectronic Device and Multilevel Interconnection Technology
Ih-Chin Chen; Girish A. Dixit; Trung Tri Doan; Nobuo Sasaki, Editor(s)

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