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Proceedings Paper

Correlation between p-GaN growth environment with electrical and optical properties of blue LEDs
Author(s): Modestas Zulonas; Ilya E. Titkov; Amit Yadav; Ksenia A. Fedorova; Andrei F. Tsatsulnikov; Wsevolod V. Lundin; Alexey V. Sakharov; Thomas Slight; Wyn Meredith; Edik U. Rafailov
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Paper Abstract

Two blue (450 nm) light–emitting diodes (LED), which only differ in top p-GaN layer growth conditions, were comparatively investigated. I-V, C-V, TLM, Electroluminescence (EL) and Photoluminescence (PL) techniques were applied to clarify a correlation between MOCVD carrier gas and internal properties. The A-structure grown in the pure N2 environment demonstrated better parameters than the B-structure grown in the N2/H2 (1:1) gas mixture. The mixed growth atmosphere leaded to an increase of sheet resistances of p-GaN layer. EL and PL measurements confirmed the advantage of the pure N2 utilization, and C(VR) measurement pointed the increase of static charge concentration near the p-GaN interface in the B structure.

Paper Details

Date Published: 8 March 2016
PDF: 9 pages
Proc. SPIE 9768, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX, 97680N (8 March 2016); doi: 10.1117/12.2211046
Show Author Affiliations
Modestas Zulonas, Aston Univ. (United Kingdom)
Ilya E. Titkov, Aston Univ. (United Kingdom)
Amit Yadav, Aston Univ. (United Kingdom)
Ksenia A. Fedorova, Aston Univ. (United Kingdom)
Andrei F. Tsatsulnikov, Ioffe Physical-Technical Institute (Russian Federation)
Wsevolod V. Lundin, Ioffe Physical-Technical Institute (Russian Federation)
Alexey V. Sakharov, Ioffe Physical-Technical Institute (Russian Federation)
Thomas Slight, Compound Semiconductor Technologies Global Ltd. (United Kingdom)
Wyn Meredith, Compound Semiconductor Technologies Global Ltd. (United Kingdom)
Edik U. Rafailov, Aston Univ. (United Kingdom)


Published in SPIE Proceedings Vol. 9768:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX
Heonsu Jeon; Li-Wei Tu; Michael R. Krames; Martin Strassburg, Editor(s)

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