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Proceedings Paper

P-doped (Al)GaN layers by MBE: applications to long-wavelength lasers and tunnel junctions
Author(s): Marco Malinverni; Denis Martin; Nicolas Grandjean
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Proc. SPIE 9768, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX, 97680M; doi: 10.1117/12.2210938
Show Author Affiliations
Marco Malinverni, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
Denis Martin, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
Nicolas Grandjean, Ecole Polytechnique Fédérale de Lausanne (Switzerland)


Published in SPIE Proceedings Vol. 9768:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX
Heonsu Jeon; Li-Wei Tu; Michael R. Krames; Martin Strassburg, Editor(s)

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